A bipolar PIN phototransistor with modulated base doping
نویسندگان
چکیده
منابع مشابه
On the Iterative Schemes to Obtain Base Doping Profiles for Reducing Base Transit Time in a Bipolar Transistor
This paper shows that base doping profiles obtained using any iterative scheme for reducing the base transit time T{, in bipolar transistors for a given neutral base width must take into account the heavy doping effects implicitly. Comparing our results with those reported earlier, we demonstrate that if the heavy doping effects are not implicitly included in the iterative scheme it will result...
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ژورنال
عنوان ژورنال: Procedia Engineering
سال: 2010
ISSN: 1877-7058
DOI: 10.1016/j.proeng.2010.09.192